Global RF GaN market is marked to exhibit remarkable expansion at a CAGR of 19.71% during the assessment period of 2017-2023
— Global RF GaN Market: Synopsis
RF GaN market reach the valuation of USD 992.38 Mn by the end of the forecast period form USD 337.28 Mn in the year 2017.
Rapid technological advancement and increased penetration of technologically advanced devices are inducing high demand for efficient cellular networks and optimum internet connectivity in even the remote geographical locations. RF GaN or RF gallium nitride provide high frequency performance along with optimum power handling capabilities which has eased its penetration in defence, aerospace and electronic warfare industries, leading to the remarkable expansion of the global RF GaN market. Increased application of RF GaN technology in military communications, IED jammers, radar, and others are also propelling the expansion of the global RF gallium nitride market during the assessment period.
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The global RF GaN market spans across North America, Europe, Asia-Pacific, and the rest of the world.
The increased demand for IT & telecommunication equipment and adoption of energy & power applications are expected to drive the market during forecast period. Developments in RF power amplifiers are expected to create an opportunity for RF GaN market. However, competition from silicon carbide (SiC) devices is expected to restrain the market during forecast period.
Global RF GaN Market: Key Players
Some of the prime players profiled by Market Research Future (MRFR) that are operating in the global RF GaN market are NXP Semiconductors NV (Netherlands), Analog Devices Inc. (the U.S.), RFHIC Corporation (South Korea), Mitsubishi Electric Corporation (Japan), Aethercomm Inc. (the U.S.), Microsemi Corporation (the U.S.), Cree Inc. (the U.S.), STMicroelectronics NV(Switzerland), Toshiba Corporation (Japan), M/A-COM Technology Solutions Holdings Inc. (the U.S.), and Qorvo Inc (the U.S.).
Global RF GaN Market: Segmentation
The global RF GaN market has been segmented based on the material type, application, and region. On the basis of material type, the RF GaN market has been segmented into GaN-on-SiC, GaN-on-Silicon, and GaN-on-Diamond. By application, the RF GaN market has been segmented into IT and telecommunication, aerospace, and military and defense.
In September 2018, Raytheon Company launched GEM-T missile with the use of Gallium Nitride (GaN). This missile is used against attacking aircraft, cruise missiles, and tactical ballistics.
In March 2018, Qorvo, a leading provider of innovative RF solutions, introduced the world’s highest power gallium nitride on silicon carbide (GaN-on-SiC) RF transistor. Operating with 1.8KW at 65 volts, the QPD1025 delivers outstanding signal integrity and extended reach essential for L-band avionics and Identification Friend or Foe (IFF) applications.
In March 2018, Microchip Technology, best known for its microcontroller range, announced the acquisition of Microsemi, a provider of semiconductor and system solutions for aerospace & defense. The acquisition is aimed at enhancing Microchip’s product portfolio, end-market diversification, operational capabilities, and customer scale.
In March 2018, Cree, Inc. announced the acquisition of Infineon Technologies AG’s radio frequency (RF) power business for approximately USD390.million to expand the former’s wireless market. The acquisition will strengthen Wolfspeed’s leadership position in RF GaN-on-SiC technologies, as well as provide access to additional markets, customers, and packaging expertise.
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Global RF GaN Market: Regional Analysis
Geographically, the global RF GaN market has been segmented into four major regions such as North America, Asia Pacific (APAC), Europe and the rest of the world. The North America region commands the major share of the global RF GaN market owing to the increasing investments for technological advancement, easy adoption of technologically advanced devices in the well-developed aerospace and defense sector and increased promotion of the advantages of adopting energy efficient devices in this region. The Asia Pacific region is projecting expansion at the fastest growth rate in the global RF GaN market owing to the increased adoption of technologically advanced solutions in various industrial sectors, increased government support for the incorporation of advanced technology and rise in demand for efficient cellular networks in the emerging economies such as China, India, Taiwan and others.
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