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The GaN and SiC power semiconductor market will benefit from the easy adoption of SiC materials in production. However, all materials do not hold the same technological maturity. For instance, GaN is currently available in the form of heterostructures, which have a thin layer of GaN at the top of different materials such as SiC, sapphire or conventional silicon. This is restricting the use of GaN for the manufacturing of vertical devices. Hence, GaN is expected to hold comparatively less adoption in the GaN and SiC power semiconductor market.Alpha and Omega Semiconductor, ON Semiconductor, Infineon Technologies, and Fuji Electric are some of the leading players in the GaN and SiC power semiconductor market. As the application areas of power semiconductor devices are aggressively diversifying, the manufacturers are inclined toward extending their product portfolios with the launch of new devices. This is bringing several product developments in the GaN and SiC power semiconductor market. In May 2019, Infineon announced the launch of its 650 V CoolSiC MOSFET devices and planned to go into mass production. The company is aiming to address the growing demand for efficient power solutions in applications such as energy storage solutions, photovoltaic inverters, and battery charging infrastructures. Microsemi is another leading player in the GaN and SiC power semiconductor market, which announced the launch of new SiC products including 700 V Schottky Barrier Diode Devices and 1,200 V SiC MOSFET. This will create growth prospects for GaN and SiC power semiconductor market.
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GaN and SiC Power Semiconductor Market will reach over USD 3 billion by 2025. The material limits of silicon-based power devices have propelled the industry to develop some of more capable and durable power devices, further providing opportunities for the GaN and SiC power semiconductor market growth. While several power supplies are increasingly adopting these devices, the popular areas witnessing growth of the GaN and SiC power semiconductor market are automotive electronic, electric vehicles, and rail traction. Their implementation is expected to increase in several solar energy applications due to high energy efficiency and very low power loss features offered by these components.
The GaN and SiC power semiconductor market is rapidly growing particularly in high power and high-temperature applications such as automotive, aircraft, and deep extraction of oil or gas. The oil & gas extraction applications need power devices to run continuously at high temperatures requiring high reliability. Field effect transistors, bipolar junction transistors, and other active switching devices implemented with these materials are the other major application areas in the GaN and SiC power semiconductor market. Wide bandgap semiconductor provides very high capabilities for critical electric fields. These field strengths are enabling semiconductor manufacturers to design devices with minimum losses by using SiC and GaN materials.
The power semiconductor devices have witnessed remarkable growth over the years. Developed countries including the U.S. holds very strong IT infrastructure and demand for electronic gadgets and appliances. The developed countries are witnessing trends such as Internet of Things (IoT) and connected devices. These factors are expected to serve well for the growth of the GaN and SiC power semiconductor market. The power semiconductor industry is influenced by the telecommunication sector, particularly technologies such as 5G communications.
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Glimpse of Table of Content (ToC)
Chapter 3. SiC and GaN Power Semiconductor Industry Insights
3.1. Industry segmentation
3.2. Industry landscape, 2015 - 2025
3.2.1. Power semiconductor industry overview
3.2.1.1. North America
3.2.1.2. Europe
3.2.1.3. Asia Pacific
3.2.1.4. Latin America
3.2.1.5. MEA
3.2.2. SiC semiconductor development
3.2.3. GaN semiconductor development
3.2.4. Global electric vehicle industry landscape, 2015 - 2025
3.2.4.1. North America
3.2.4.2. Europe
3.2.4.3. Asia Pacific
3.2.4.4. Latin America
3.2.4.5. MEA
3.2.5. Global renewable energy industry landscape
3.2.5.1. North America
3.2.5.2. Europe
3.2.5.3. Asia Pacific
3.2.5.4. Latin America
3.2.5.5. MEA
3.3. Industry ecosystem analysis
3.3.1. Material & component suppliers
3.3.2. Manufacturers
3.3.3. Distribution channel analysis
3.3.4. Vendor matrix
3.4. Technology & innovation landscape
3.5. Regulatory landscape
3.5.1. North America
3.5.2. Europe
3.5.3. Asia Pacific
3.5.4. Latin America
3.5.5. MEA
3.6. Industry impact forces
3.6.1. Growth drivers
3.6.1.1. Stronger capabilities of SiC and GaN over silicon
3.6.1.2. Rapid developments in the semiconductor industry
3.6.1.3. Growth of hybrid and electric vehicles market
3.6.1.4. Use of power devices in renewable energy applications
3.6.1.5. Research and development in Wide Band Gap Semiconductors (WBG) to drive growth in the U.S.
3.6.2. Industry pitfalls and challenges
3.6.2.1. Significant use of conventional silicon materials for manufacturing
3.6.2.2. High manufacturing cost
3.7. Growth potential analysis
3.8. Porter’s analysis
3.8.1. Industry rivalry
3.8.2. Threat of new entrants
3.8.3. Buyer power
3.8.4. Supplier power
3.8.5. Threat of substitutes
3.9. Competitive landscape, 2018
3.9.1. Company market share
3.9.2. Investment landscape
3.9.3. Strategy dashboard
3.10. PESTEL analysis
Chapter 4. GaN and SiC Power Semiconductor Market, By Product
4.1. Key trends in GaN and SiC Power Semiconductor Market, by product
4.2. SiC power module
4.2.1. Market estimates and forecast, 2015 - 2025
4.3. GaN power module
4.3.1. Market estimates and forecast, 2015 – 2025
4.4. Discrete SiC
4.4.1. Market estimates and forecast, 2015 - 2025
4.5. Discrete GaN
4.5.1. Market estimates and forecast, 2015 - 2025
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